MBR20L60CT Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE™ Power Rectifier 60 V, 20 A

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20L60CT
FEATURES
·Guard -Ring for Stress Protection
·Low Power Loss/High Efficiency
·High surge capability
·Pb-Free Packages are Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
60
V
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
240
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃
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