MBR20H150CT Datasheet, PDF (1/2 Pages) Kersemi Electronic Co., Ltd. – Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20H150CT
FEATURES
·Dual rectifier construction，positive center tap
·Low Power Loss,High Efficiency
·Guard ring for overvoltage protection
·Metal of silicon rectifier, majonty carrier conduction
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in high frequency inverters,free wheeling and
polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
150
V
IF(AV)
Average Rectified Forward Current
10
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 200
A
on rated load conditions
IRRM
Peak Repetitive Reverse Surge Current
(2μs, 1.0kHz)
1.0
A
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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