MBR2090CT Datasheet, PDF (1/2 Pages) Vishay Siliconix – Dual Common-Cathode High-Voltage Schottky Rectifier

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR2090CT
FEATURES
·Guard -Ring for Stress Protection
·Low Forward Voltage
·High Operating Junction Temperature
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High surge capability
·Low Stored Charge Majority Carrier Conduction
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
90
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 133℃
10
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz) TC= 133℃
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
IRRM
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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