MBR2060CT Datasheet, PDF (1/2 Pages) Motorola, Inc – SWITCHMODE™ Power Rectifiers

INCHANGE Semiconductor
Schottky Barrier Rectifier
FEATURES
·Dual Rectifier Conduction, Positive Center Tap
·Metal Silicon Junction, Majority Carrier Conduction
·Low Power Loss/High Efficiency
·High Current Capability, Low Forward Voltage Drop
·High Surge Capacity
·Guarding for Overvoltage protection
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·High Temperature Soldering Guaranteed:
250℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_RRM
V_RWM
V_R
I_F(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
T_C= 135℃
60
V
20
A
Peak Repetitive Forward Current
I_FRM
(Rated V_R,Square Wave,2.0kHz) T_C= 135℃
20
A
Nonrepetitive Peak Surge Current
I_FSM
8.3ms single half sine-wave superimposed
150
A
on rated load conditions
I_RRM
Peak Repetitive Reverse Current
(2.0μs, 1.0kHz)
0.5
A
T_J
Junction Temperature
-65~150 ℃
T_stg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
Product Specification
MBR2060CT
isc website：www.iscsemi.cn
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