MBR2045CT Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR2045CT
FEATURES
·Dual Rectifier Conduction, Positive Center Tap
·Metal Silicon Junction, Majority Carrier Conduction
·Low Power Loss/High Efficiency
·High Current Capability, Low Forward Voltage Drop
·High Surge Capacity
·Guarding for Overvoltage protection
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·High Temperature Soldering Guaranteed:
250℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_RRM DC Blocking Voltage
45
V
I_F(AV)
Average Rectified Forward Current
T_C= 125℃
20
A
Nonrepetitive Peak Surge Current
I_FSM
8.3ms single half sine-wave superimposed
250
A
on rated load conditions
T_J
Junction Temperature
170
℃
T_stg
Storage Temperature Range
-50~170 ℃
isc website：www.iscsemi.cn
1