MBR20200 Datasheet, PDF (1/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20200
FEATURES
·Metal of silicon rectifier, majonty carrier conduction
·Guard ring for transient protection
·Low power loss high efficiency
·High Surge Capability,High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MAXIMUN RATINGS
·Operating Temperature: -55C to +150C
·Storage Temperature: -55C to +150C
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
200
V
140
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 135℃
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
200
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
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