MBR20150PT Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIERS

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20150PT
FEATURES
·Plastic material used carriers Unerwriter Laboratory
·Metal silicon rectifier, majonty carrier conduction
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Surge Capability,High Current Capability
· RoHS product
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in low voltage ,high frequency inverters,free wheeling and
polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
150
V
IF(AV)
Average Rectified Forward Current
20
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 150
A
on rated load conditions
IRRM
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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