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MBR1665CT Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR1665CT
FEATURES
·Low Forward Voltage
·170℃ Operating Junction Temperature
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM DC Blocking Voltage
65
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 100℃
16
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed
210
A
on rated load conditions
TJ
Junction Temperature
170
℃
Tstg
Storage Temperature Range
-50~170 ℃
isc website:www.iscsemi.cn
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