MBR16200CT Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR16200CT
FEATURES
·Low power loss ,high efficiency
·Low Forward Voltage
·High surge capacity
·Pb-Free Packages are Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for in low voltage,high frequency inverters，free
wheeling,and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
200
V
140
V
IF(AV)
Average Rectified Forward Current
(Rated VR)
16
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃
isc website：www.iscsemi.com
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