MBR16100CT Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

Schottky Barrier Rectifier
FEATURES
·Low Forward Voltage
·Low power loss high efficiency
·High Surge Capability
·High Operating Junction Temperature
·Low Stored Charge Majority Carrier Conduction
·Pb-Free Packages are Available
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power Supply-output Rectification
·Power Management
·Instrumentation
INCHANGE Semiconductor
MBR16100CT
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
100
V
8
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz) TC= 165℃
16
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
IRRM
Peak Repetitive Reverse Surge Current
(2.0μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
-65~175 ℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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