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MBR1530 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier | |||
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR1530
FEATURES
·Metal of siliconrectifier, majonty carrier conducton
·Guard ring for transient protection
·Low power loss high efficiency
·High Surge Capability,High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MAXIMUN RATINGS
·Operating Temperature: -55ï°C to +150ï°C
·Storage Temperature: -55ï°C to +150ï°C
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
30
V
21
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 125â
15
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 â
Tstg
Storage Temperature Range
-55~150 â
isc websiteï¼www.iscsemi.com
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