MBR15200 Datasheet, PDF (1/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR15200
FEATURES
·Low forward voltage
·High frequency operation
·Guard ring for enhanced ruggedness and long term reliability
·This is a Pb-Free Device
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Converters
·Free-Wheeling diodes
·Reverse battery protection
·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 135℃
200
V
15
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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