MBR10L60CT Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE™ Power Rectifier 60 V, 10 A

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10L60CT
FEATURES
·Low Forward Voltage
·Low Power Loss/High Efficiency
·High surge capability
·Guard -Ring for Stress Protection
·Pb-Free Packages are Available
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power Supply-output Rectification
·Power Management
·Instrumentation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
Average Rectified Forward Current
(Rated VR) TC= 140℃
60
V
5
A
10
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
200
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃
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