MBR1060 Datasheet, PDF (1/2 Pages) Motorola, Inc – SWITCHMODE™ Power Rectifiers

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR1060
FEATURES
·Schottky Barrier Chip
·Guard Ring Die Construction for Transient Protection
·Low Power Loss/High Efficiency
·High Surge Capability
·High Current Capability，Low Forward Voltage Drop
·Plastic Material：UL Flammability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
60
V
VR(RMS) RMS Reverse Voltag
42
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 125℃
10
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
dv/dt Voltage Rate of Change (Rated V_R)
1000 V/μs
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