MBR10200 Datasheet, PDF (1/2 Pages) Kersemi Electronic Co., Ltd. – 10.0AMPS.Schottky Barrier Rectifiers

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200
FEATURES
·Metal silicon junction，majority carrier conduction
·Low Power Loss/High Efficiency
·High current capability，low forward voltage drop
·High surge capability
·Guardring for overvoltage protection
·High temperature soldering guaranteed
·RoHS product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
200
V
10
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz) TC= 135℃
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
IRRM
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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