MBR10120 Datasheet, PDF (1/2 Pages) Unisonic Technologies – SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10120
FEATURES
·Low Reverse Current
·Low Stored Charge, Majority Carrier Conduction
·Low Power Loss/High Efficiency
·Highly Stable Oxide Passivated Junction
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High Frequency switch power Supply
·Free wheeling diodes and polarity protection applicationsds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM
VRWM
VR
VRMS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Maximum RMS Reverse Voltage
VALUE UNIT
120
V
70
V
IF(AV)
IFSM
TJ
Average Rectified Forward Current
10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
110
A
wave, single phase, 60Hz)
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
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