KTD998 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Complement to Type KTB778
APPLICATIONS
·High power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Product Specification
KTD998
isc website：www.iscsemi.com
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