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KTD3055 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD3055
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Complement to Type KTB2955
APPLICATIONS
·High power amplifier applications
·Recommended for 30~35W audio frequency amplifier output
stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
1
A
40
W
150
â
Tstg
Storage Temperature
-55~150 â
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
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