KTD2059 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR(GENERAL PURPOSE)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2059
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A)
·Complement to Type KTB1367
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
0.5
A
30
W
150
℃
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}