KTD2058 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2058
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·Collector Power Dissipation
: PC= 25 W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A)
·Complement to Type KTB1366
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.5
A
2
W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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