KTD1945 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Low Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC= 2A
·High Collector Power Dissipation-
: PC= 25W(Max)
APPLICATIONS
·Designed for general purpose application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.5
A
2
W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Product Specification
KTD1945
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}