KTD1414 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, HAMMER DRIVER,PULSE MOTOR DRIVER)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1414
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 1A, VCE= 2V
APPLICATIONS
·Switching applications
·Hammer driver,pulse motor driver applications
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}