KTC4370A Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTC4370A
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= 180V(Min)
·Complement to Type KTA1659A
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5.0
V
IC(DC)
Collector Current(DC)
1.5
A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@TC=25℃
Junction Temperature
Tstg
Storage Temperature
0.15
A
20
W
150
℃
-55~150 ℃
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