KTC2800 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTC2800
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= 160V(Min)
·Complement to Type KTA1700
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
1.5
A
IB
Base Current
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1.0
A
1.5
W
10
150
℃
-55~150
℃
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