KTB2955 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB2955
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type KTD3055
APPLICATIONS
·High power amplifier applications
·Recommended for 30~35W audio frequency amplifier output
stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
-1
A
40
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website： www.iscsemi.com
1 _{isc & iscsemi is registered trademark}