KTB2510 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER DARLINGTON)

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
KTB2510
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max) @IC= -7A
·High DC Current Gain
: hFE= 5000(Min) @ IC= -7A, VCE= -4V
·Complement to Type KTD1510
APPLICATIONS
·High power amplifier applications
·Recommended for 60W audio amplifier output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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