KTB1368 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1368
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Collector Power Dissipation-
: PC= 25W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A)
·Complement to Type KTD2060
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-0.4
A
25
W
150
℃
-55~150 ℃
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