KTA1962-3PN Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1962
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min)
·Good Linearity of hFE
·Complement to Type KTC5242
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1.5
A
130
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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