KTA1659A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1659A
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= -180V(Min)
·Complement to Type KTC4370A
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5.0
V
IC(DC)
Collector Current(DC)
-1.5
A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@TC=25℃
Junction Temperature
Tstg
Storage Temperature
-0.15
A
20
W
150
℃
-55~150 ℃
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