KT815A Datasheet, PDF (1/2 Pages) Integral Corp. – DISCRETE SEMICONDUCTOR Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KT815A
DESCRIPTION
·High Collector Current-IC= 1.5A
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
2
A
10
W
1
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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