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| KSD569 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD569
DESCRIPTION
·High Collector Current:: IC= 7A
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 5A
·Complement to Type KSB708
APPLICATIONS
·Designed for low-frequency power amplifiers and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Total Power Dissipation
@ TC=25â
PC
Total Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
3.5
A
40
W
1.5
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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