KSD5014 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5014
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current- Continuous
2.5
A
I_CP
Collector Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
10
A
50
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
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