IRFZ48N Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ48N
FEATURES
·Drain Current –I_D= 64A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 55V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.014Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage-Continuous
I_D
Drain Current-Continuous
I_DM
Drain Current-Single Pluse
P_D
Total Dissipation @T_C=25℃
T_J
Max. Operating Junction Temperature
T_stg
Storage Temperature
VALUE UNIT
55
V
±20
V
64
A
210
A
130
W
175
℃
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
1.15 ℃/W
62
℃/W
isc Website：www.iscsemi.cn