IRFZ34N Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ34N
FEATURES
·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage-Continuous
I_D
Drain Current-Continuous
I_DM
Drain Current-Single Pluse
P_D
Total Dissipation @T_C=25℃
T_J
Max. Operating Junction Temperature
T_stg
Storage Temperature
VALUE UNIT
55
V
±20
V
26
A
100
A
56
W
-55~175 ℃
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.7
62
UNIT
℃/W
℃/W
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