IRFZ24N Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ24N
FEATURES
·Drain Current –ID=17A@ TC=25℃
·Drain Source Voltage-
: VDSS= 55V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.07Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
DESCRIPTION
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
Drain Current-Continuous@TC=25℃
ID
Drain Current-Continuous@TC=100℃
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
55
V
±20
V
17
A
12
68
A
45
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
3.3
62
UNIT
℃/W
℃/W
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