IRFW450 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFW450
FEATURES
·Drain Current –I_D= 14A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 500V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.4Ω (Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage-Continuous
I_D
Drain Current-Continuous
I_DM
Drain Current-Single Pluse
P_D
Total Dissipation @T_C=25℃
T_J
Max. Operating Junction Temperature
T_stg
Storage Temperature
VALUE UNIT
500
V
±20
V
14
A
56
A
180
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.69
30
UNIT
℃/W
℃/W
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