IRFS840A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Advanced Power MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS840A
FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage-Continuous
I_D
Drain Current-Continuous
I_DM
Drain Current-Single Pluse
P_D
Total Dissipation @T_C=25℃
T_J
Max. Operating Junction Temperature
T_stg
Storage Temperature
VALUE UNIT
500
V
±20
V
4.6
A
32
A
44
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.86
62.5
UNIT
℃/W
℃/W
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