IRFS240A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Advanced Power MOSFET (200V, 0.18ohm, 12.8A)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS240A
FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±30
V
I_D
Drain Current-Continuous
12.8
A
I_DM
Drain Current-Single Pluse
80
A
P_D
Total Dissipation @T_C=25℃
73
W
T_J
Max. Operating Junction Temperature
-55~150 ℃
T_stg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
1.7
℃/W
R_{th j-a} Thermal Resistance, Junction to Ambient
40
℃/W
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