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IRFP256 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP256
FEATURES
·Drain Current âID= 23A@ TC=25â
·Drain Source Voltage-
: VDSS= 275V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.14Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
275
V
±20
V
ID
Drain Current-Continuous
23
A
IDM
Drain Current-Single Pluse
92
A
PD
Total Dissipation @TC=25â
180
W
TJ
Max. Operating Junction Temperature
-55~150 â
Tstg
Storage Temperature
-55~150 â
isc websiteï¼www.iscsemi.cn
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