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IRFP250A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250A
FEATURES
·Drain Current âID= 32A@ TC=25â
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.085Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±20
V
ID
Drain Current-Continuous
32
A
IDM
Drain Current-Single Pluse
128
A
PD
Total Dissipation @TC=25â
204
W
TJ
Max. Operating Junction Temperature
-55~150 â
Tstg
Storage Temperature
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.7
â/W
Rth j-a Thermal Resistance, Junction to Ambient
30
â/W
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