IRFP242R Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP242R
FEATURES
·Drain Current –I_D= 18A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 200V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.22Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±20
V
I_D
Drain Current-Continuous
18
A
I_DM
Drain Current-Single Pluse
72
A
P_D
Total Dissipation @T_C=25℃
150
W
T_J
Max. Operating Junction Temperature
-55~150 ℃
T_stg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
0.83 ℃/W
R_{th j-a} Thermal Resistance, Junction to Ambient
30
℃/W
isc website：www.iscsemi.cn
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