IRFBC30 Datasheet, PDF (1/2 Pages) STMicroelectronics – N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFBC30
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·High current ,high speed switching
·Switch mode power supplies
·DC-AC converters for welding equipment and
Uninterruptible power supplies and motor
Driver.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
V
±20
V
I_D
Drain Current-Continuous
3.6
A
I_DM
Drain Current-Single Pluse
14
A
P_D
Total Dissipation @T_C=25℃
75
W
T_J
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
1.7
℃/W
62.5 ℃/W
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