IRFB4110 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFB4110
FEATURES
·Drain Current –I_D= 180A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 100V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 4.5mΩ(Max)
Applications
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
V
±20
V
ID
Drain Current-Continuous
180
A
IDM
Drain Current-Single Pluse
670
A
PD
Total Dissipation @TC=25℃
370
W
T_J
Max. Operating Junction Temperature
175
℃
T_stg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
0.402 ℃/W
Thermal Resistance, Junction to Ambient 62 ℃/W
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