IRF840FI Datasheet, PDF (1/2 Pages) STMicroelectronics – N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF840FI
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
450
V
±20
V
I_D
Drain Current-Continuous
4.5
A
I_DM
Drain Current-Single Pluse
32
A
P_D
Total Dissipation @T_C=25℃
40
W
T_J
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
3.12 ℃/W
62.5 ℃/W
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