IRF840B Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF840B
·FEATURES
·Drain Current –ID=8.0A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max)
·DESCRITION
·Designed for high effciency switch mode power supplies,
Power factor correction and electronic lamp ballasts based
on half bridge.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Plused
32
A
PD
Total Dissipation @TC=25℃
134
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.93 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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