IRF840 Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF840
·FEATURES
·Drain Current –I_D=8.0A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 500V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.85Ω(Max)
·DESCRITION
·Designed for high voltage, high speed switching power applic-
ations such as switching regulators, converters, solenoid and
relay drivers.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
500
V
±20
V
I_D
Drain Current-Continuous
8
A
I_DM
Drain Current-Single Plused
32
A
P_D
Total Dissipation @T_C=25℃
125
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.0
62.5
℃/W
℃/W
isc Website：www.iscsemi.cn