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| IRF830 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated | |||
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MOSFET
IRF830
N-channel mosfet transistor
INCHANGE
 Features
With TO-220 package
Simple drive requirements
Fast switching
V DSS=500V; RDS(ON)1.5 ;I
1.gate 2.drain 3.source
D=4.5A
 Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
ID
Drain Current-continuous@ TC=25
Ptot
Total Dissipation@TC=25
Tj
Max. Operating Junction temperature
Tstg
Storage temperature
RATING
500
20
4.5
100
150
-65~150
UNIT
V
V
A
W
 Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
VGS(TH)
RDS(ON)
IGSS
IDSS
VSD
Drain-source breakdown voltage VGS=0; ID=0.25mA
Gate threshold voltage
VDS= VGS; ID=0.25mA
Drain-source on-stage resistance VGS=10V; ID=2.7A
Gate source leakage current
VGS=20V ;VDS=0
Zero gate voltage drain current VDS=500V; VGS=0
Diode forward voltage
IF=4.5A; VGS=0
123
TO-220
MIN MAX UNIT
500
V
2
4
V
1.5
100
nA
1.0 uA
1.6
V
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