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IRF822FI Datasheet, PDF (1/2 Pages) STMicroelectronics – N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF822FI
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
500
V
±20
V
ID
Drain Current-Continuous
1.9
A
IDM
Drain Current-Single Pluse
7.6
A
PD
Total Dissipation @TC=25â
35
W
TJ
Max. Operating Junction Temperature
-55~150 â
Tstg
Storage Temperature
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.5
80
UNIT
â/W
â/W
isc websiteï¼www.iscsemi.cn
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