IRF820A Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF820A
FEATURES
·Low RDS(on) = 2.0Ω( TYP)
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
500
V
±30
V
2.5
A
128
A
50
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
2.57
62.5
UNIT
℃/W
℃/W
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