IRF741 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF741
DESCRIPTION
·Drain Current –I_D= 10A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 350V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.55Ω(Max)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
Drain-Source Voltage (V_GS=0)
350
V
V_GS
Gate-Source Voltage
±20
V
I_D
Drain Current-continuous@ TC=25℃
10
A
P_tot
Total Dissipation@TC=25℃
125
W
T_j
Max. Operating Junction Temperature -55~150 ℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
1.0
℃/W
R_{th j-a} Thermal Resistance,Junction to Ambient
80
℃/W
isc website：www.iscsemi.cn
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